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Laser generation thresholds of the cholesteric liquid crystal layer
A.A. Malinchenko 1, N.A. Vanyushkin 2, A.V. Bulanov 3, A.H. Gevorgyan 1,3

1 Far Eastern Federal University, Institute of High Technologies and Advanced Materials,
10 Ajax Bay, Russky Island, Vladivostok, 590922, Russia;
2 Moscow Institute of Physics and Technology, Phystech School of Electronics, Photonics and Molecular Physics,
Institutsky lane 9, Dolgoprudny, 141700, Russia;
3 V.I. Il'ichev Pacific Oceanological Institute Far Eastern Branch of the Russian Academy of Science,
43 Bal – 5 Tverskaya Str, Vladivostok, 640041, Russia

 PDF, 1607 kB

DOI: 10.18287/2412-6179-CO-1643

Pages: 916-923.

Full text of article: English language.

Abstract:
The laser threshold of the eigenmodes in cholesteric liquid crystal (CLC) cells are calculated. The influence of gain on light localization was investigated. The influence of absorption and gain on the light energy density in the CLC layer both at isotropic and anisotropic absorption and gain were investigated for the first time. The calculated threshold values were compared with analytical expression for laser thresholds obtained under the condition ImK<<1/d, where d is the CLC layer thickness, and K is the resonance wave vector.

Keywords:
cholesteric liquid crystal, laser threshold, eigenmodes, gain, absorption.

Citation:
For AHG and AVB the work was carried out within the framework of the state projects: reg. No. 124042300003-5.

Acknowledgements:
Malinchenko AA, Vanyushkin NA, Bulanov AV, Gevorgyan AH. Laser generation thresholds of the cholesteric liquid crystal layer. Computer Optics 2025; 49(6): 916-923. DOI: 10.18287/2412-6179-CO-1643.

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